Reduced surface field layer in varactor

ABSTRACT

Various embodiments of the present disclosure are directed towards a varactor comprising a reduced surface field (RESURF) region. In some embodiments, the varactor includes a drift region, a gate structure, a pair of contact regions, and a RESURF region. The drift region is within a substrate and has a first doping type. The gate structure overlies the drift region. The contact regions are within the substrate and overlie the drift region. Further, the contact regions have the first doping type. The gate structure is laterally sandwiched between the contact regions. The RESURF region is in the substrate, below the drift region, and has a second doping type. The second doping type is opposite the first doping type. The RESURF region aids in depleting the drift region under the gate structure, which decreases the minimum capacitance of the varactor and increases the tuning range of the varactor.

REFERENCE TO RELATED APPLICATION

This application claims the benefit of U.S. Provisional Application No.62/749,188, filed on Oct. 23, 2018, the contents of which are herebyincorporated by reference in their entirety.

BACKGROUND

Many modern-day electronic devices contain metal-oxide-semiconductor(MOS) varactors. A MOS varactor is a semiconductor diode with acapacitance dependent upon the voltage across the MOS varactor. MOSvaractors have been used commonly as tuning components in LC-tankvoltage controlled oscillators (VCOs).

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates a cross-sectional view of some embodiments of anintegrated circuit (IC) including a MOS varactor with a RESURF region.

FIGS. 2A-2E illustrate cross-sectional views of various alternativeembodiments of the IC of FIG. 1.

FIGS. 3A and 3B illustrate cross-sectional views of various moredetailed embodiments of the IC of FIG. 1 in which the IC comprisesadditional features.

FIG. 4 illustrates a cross-sectional view of some embodiments of an ICincluding a pair of MOS varactors.

FIGS. 5, 6, 7A, 7B, 8A, 8B and 9-12 illustrate cross-sectional views ofvarious embodiments of a method for forming an IC including a varactorwith a RESURF region.

FIG. 13 illustrates a block diagram of some embodiments of the method ofFIGS. 5, 6, 7A, 7B, 8A, 8B and 9-12.

FIG. 14 illustrates a cross-sectional view of some embodiments of amethod for forming a RESURF region and a well region by epitaxy.

FIGS. 15A and 15B illustrates cross-sectional views of some embodimentsof a method for forming a RESURF region and well region in which thewell region is formed in an epitaxial layer formed after the RESURFregion.

DETAILED DESCRIPTION

The present disclosure provides many different embodiments, or examples,for implementing different features of this disclosure. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

A typical metal oxide semiconductor (MOS) varactor includes a gatestructure over an N-type well region, which is within a substrate.N+-type contact regions are in the substrate, overlying the N-type well,and are respectively along opposite sidewalls of the gate structure. Thegate structure comprises a gate electrode disposed over a gate-oxidelayer. Applying a voltage from the gate electrode to the N+-type contactregions varies a capacitance of the MOS varactor. Increasing the voltageincreases the concentration of electrons in the N-type well, along thegate electrode, thereby reducing resistance between the N+-type contactregions and increasing the capacitance of the MOS varactor. Continuingto increase the voltage increases the capacitance until a maximumcapacitance.

Decreasing the voltage decreases the concentration of electrons in theN-type well, along the gate electrode, thereby increasing resistancebetween the N+-type contact regions and decreasing the capacitance ofthe MOS varactor. At a certain voltage, while decreasing the voltageacross the MOS varactor, a depletion region forms in the N-type well.Further, continuing to decrease the voltage increases the depth to whichthe depletion region extends into the N-type well until a maximumdepletion depth is reached. At the maximum depletion depth, the MOSvaractor reaches its minimum capacitance. The ratio of the maximumcapacitance to the minimum capacitance defines a tuning range of the MOSvaractor. The larger the tuning range, the better since a large tuningrange provides greater flexibility for circuit designers.

Increasing the doping concentration of the N-type well reduces theresistance of the N-type well and improves the Q factor of the MOSvaractor. However, the increased doping concentration decreases themaximum depletion depth. This, in turn, increasing the minimumcapacitance of the MOS varactor and decreases the tuning range of theMOS varactor. Therefore, there is a tradeoff between Q factor and tuningrange.

Various embodiments of the present disclosure are directed towards avaractor comprising a reduced surface field (RESURF) region. In someembodiments, the varactor is on a substrate and comprises a driftregion, a gate structure, a pair of contact regions, and a RESURFregion. The drift region is within the substrate and has a first dopingtype. The gate structure overlies the drift region. The contact regionsare within the substrate and overlie the drift region. Further, thecontact regions have the first doping type. The gate structure islaterally sandwiched between the contact regions. The RESURF region isin the substrate, below the drift region, and has a second doping type.The second doping type is opposite the first doping type.

The RESURF region aids in depleting the drift region under the gatestructure. When the varactor is in depletion mode, depletion is greaterwith the RESURF region than without the RESURF region for a givenvoltage. Further, full depletion may be achieved with the RESURF region.Since the capacitance of the varactor decreases as depletion increases,inclusion of the RESURF region decreases the minimum capacitance. This,in turn, increases the tuning range of the varactor. Since depletion isenhanced, the Q factor of the varactor may be increased while stillmaintaining a good tuning range. For example, the doping concentrationof the drift region may be increased, or the gate length of the gatestructure may be decreased, to decrease resistance between the contactregions and enhance the Q factor.

With reference to FIG. 1, a cross-sectional view 100 of some embodimentsof an integrated circuit (IC) comprising a varactor 125 is provided. Thevaractor 125 is disposed on a substrate 102. The substrate 102 may be,for example, a bulk substrate (e.g., a bulk silicon substrate), asilicon-on-insulator (SOI) substrate, or some other suitable substrate.In some embodiments, the substrate 102 comprises one or more epitaxiallayers. The varactor 125 includes a RESURF region 108, and furtherincludes a well region 116 (in some embodiments, it is called a driftregion). The RESURF region 108 and the well region 116 are disposedwithin the substrate 102 and overlie a bulk region 102 b of thesubstrate 102. Further, the well region 116 overlies the RESURF region108. The RESURF region 108 and the well region 116 have opposite dopingtypes and, during use of the varactor 125, the RESURF region 108 aidesin forming a depletion region 115 in the substrate 102.

A first contact region 114 and a second contact region 118 are disposedwithin the substrate 102, overlying the well region 116. Further, thefirst and second contact regions 114, 118 are respectively alongopposite sidewalls of a gate structure. The first and second contactregions 114, 118 have the same doping type, but a greater dopingconcentration than the well region 116, and are electrically coupledtogether at a first terminal 120 of the varactor 125. The gate structureoverlies the well region 116, laterally between the first and secondcontact regions 114, 118. The gate structure comprises a gate dielectriclayer 122, and further comprises a gate electrode 124 overlying the gatedielectric layer 122. A second terminal 121 of the varactor 125 iselectrically coupled to the gate electrode 124.

In some embodiments, during operation of the varactor 125, the varactor125 varies between states depending upon the voltage applied from thesecond terminal 121 of the varactor 125 to the first terminal 120 of thevaractor 125. The varactor 125 may, for example, be in a state ofaccumulation where majority carries accumulate in the well region 116,along the gate structure. The varactor 125 may, for example, be in astate of depletion where majority carriers are partially or fullydepleted from the well region 116, along the gate structure. Where thewell region 116 is N-type, the majority carrier is electrons. Where thewell region 116 is P-type, the majority carrier is holes. Further, thecapacitance of the varactor 125 varies between a minimum capacitance anda maximum capacitance depending upon the voltage applied from the secondterminal 121 of the varactor 125 to the first terminal 120 of thevaractor 125. Where the well region 116 is N-type, increasing thevoltage increases capacitance and decreasing the voltage decreasescapacitance. Where the well region 116 is P-type, increasing the voltagedecreases capacitance and decreasing the voltage increases capacitance.

When the varactor 125 is in a state of depletion, the depletion region115 forms in the substrate 102, overlying the well region 116. Further,while the varactor 125 is in a state of depletion, moving the voltageacross the varactor 125 towards the voltage at the minimum capacitanceincreases the depth D_(d) to which the depletion region 115 extends intothe substrate 102 until a maximum depletion depth is reached. Hence, asthe depletion depth D_(d) of the depletion region 115 increases, thecapacitance of the varactor 125 decreases. Further, at the maximumdepletion depth, the varactor 125 has its minimum capacitance.

By including the RESURF region 108, the substrate 102 is more readilydepleted under the gate structure, whereby the maximum depletion depthis increased. In some embodiments, full depletion can be achieved underthe gate structure, such that the depletion region 115 extends from atop surface of the substrate 102 to the RESURF region 108. Due to theincrease in the maximum depletion depth, the minimum capacitance of thevaractor 125 is reduced and the tuning range of the varactor 125 isincreased. As noted above, the tuning range may, for example, be theratio of the maximum capacitance to the minimum capacitance.Additionally, due to the increase in the tuning range of the varactor125, the Q factor of the varactor 125 may be increased while stillmaintaining a large tuning range. The Q factor may, for example, beincreased by increasing the doping concentration of the well region 116and/or by reducing the gate length L of the gate structure.

In some embodiments, a first separation S_(a) between a top surface ofthe RESURF region 108 and bottom surfaces of the first and secondcontact regions 114, 118 is about 1-1000 nanometers, about 1-500nanometers, about 500-1000 nanometers, or some other suitable value.Further, in some embodiments, the first separation S_(a) is less thanabout 1000 nanometers, about 500 nanometers, about 10 nanometers, orsome other suitable value. In some embodiments, a second separationS_(b) between the top surface of the RESURF region 108 and a top surfaceof the substrate 102 is about 50-1000 nanometers, about 50-500nanometers, about 500-1000 nanometers, or some other suitable value. Insome embodiments, the well region 116 extends from a top surface of thesubstrate 102, into the substrate 102, to a depth D_(w) that is about10-1000 nanometers, about 10-500 nanometers, about 500-1000 nanometers,or some other suitable value. In some embodiments, the RESURF region 108has a height H that is about 50-1000 nanometers, about 50-500nanometers, about 500-1000 nanometers, or some other suitable value.

In some embodiments, the well region 116 is doped with N-type dopantsand the RESURF region 108 is doped with P-type dopants. In otherembodiments, the well region 116 is doped with the P-type dopants andthe RESURF region 108 is doped with N-type dopants. The P-type dopantsmay, for example, be or comprise boron, difluoroboryl (e.g., BF₂),indium, some other suitable P-type dopants, or any combination of theforegoing. The N-type dopants of the well region 116 may, for example,be or comprise phosphorous, arsenic, antimony, some other suitableN-type dopants, or any combination of the foregoing. In someembodiments, a doping concentration of the well region 116 and/or adoping concentration of the RESURF region 108 is/are about 1×10¹² toabout 1×10¹⁶ atoms per cubic centimeter (atoms/cm³), about 1×10¹² toabout 1×10¹⁴ atoms/cm³, about 1×10¹⁴ to about 1×10¹⁶ atoms/cm³, or someother suitable concentration. Such embodiments may, for example, arisewhen the well region 116 and/or the RESURF region 108 is/are formed byion implantation. In some embodiments, a doping concentration of thewell region 116 and/or a doping concentration of the RESURF region 108is/are about 1×10¹⁵ to about 1×10²⁰ atoms/cm³, about 1×10¹⁵ to about1×10¹⁷ atoms/cm³, about 1×10¹⁷ to about 1×10²⁰ atoms/cm³, or some othersuitable concentration. Such embodiments may, for example, arise whenthe well region 116 and/or the RESURF region 108 is/are formed byepitaxy.

In some embodiments, the substrate 102 comprises a semiconductorsubstrate (not shown), and further comprises an epitaxial layer (notshown) overlying the semiconductor substrate. The semiconductorsubstrate may, for example, be a bulk monocrystalline silicon substrate,some other suitable bulk semiconductor substrate, a SOI substrate, orsome other suitable semiconductor substrate. The epitaxial layer may,for example, be or comprise monocrystalline silicon and/or some othersuitable semiconductor material(s). In some embodiments in which thesubstrate 102 comprises the epitaxial layer, the well region 116 and theRESURF region 108 may both be in the epitaxial layer. In otherembodiments in which the substrate 102 comprises the epitaxial layer,the well region 116 is in the epitaxial layer and the RESURF region 108is in the substrate 102. In some embodiment, the substrate 102 comprisesthe semiconductor substrate, a first epitaxial layer (not shown), and asecond epitaxial layer (not shown), where the semiconductor substrate,the first epitaxial layer, and the second epitaxial layer are stackedwith the first epitaxial layer between the semiconductor substrate andthe second epitaxial layer. The first and second epitaxial layers may,for example, be or comprise monocrystalline silicon and/or some othersuitable semiconductor material(s). In some embodiments in which thesubstrate 102 comprises the first and second epitaxial layers, RESURFand well regions 108, 116 are respectively in the second and firstepitaxial layers.

With reference to FIG. 2A, a cross-sectional view 200 a of somealternative embodiments of the IC of FIG. 1 is provided in which theRESURF region 108 directly contacts the first and second contact regions114, 118 and has a top surface about even with bottom surfacesrespectively of the first and second contact regions 114, 118. In someembodiments, if the RESURF region 108 directly contacts the first andsecond contact regions 114, 118, then an area of the well region 116 isreduced directly under the gate electrode 124, thereby facilitating fulldepletion of the substrate 102 below the gate electrode 124.

With reference to FIG. 2B, a cross-sectional view 200 b of somealternative embodiments of the IC of FIG. 2A is provided in which aburied implant region 202 is in the substrate 102, under the RESURFregion 108. In some embodiments, the buried implant region 202 has thesame doping type as the well region 116 and hence an opposite dopingtype as the RESURF region 108. For example, the buried implant region202 and the well region 116 may both be N-type, and the RESURF region108 may be P-type, or vice versa. In such embodiments, a depletionregion forms at an interface between the buried implant region 202 andthe RESURF region 108, thereby facilitating electrical isolation betweenthe varactor 125 and the bulk region 102 b of the substrate 102. In someembodiments, the buried implant region 202 has the same doping type, buta lower doping concentration, than the well region 116. In someembodiments, the buried implant region 202 directly contacts the wellregion 116.

With reference to FIG. 2C, a cross-sectional view 200 c of somealternative embodiments of the IC of FIG. 1 is provided in which theRESURF region 108 directly contacts the first and second contact regions114, 118 and has a top surface elevated above bottom surfacesrespectively of the first and second contact regions 114, 118.

With reference to FIG. 2D, a cross-sectional view 200 d of somealternative embodiments of the IC of FIG. 1 is provided in which theRESURF region 108 has an upward protrusion 204 extending upward towardthe gate structure at a location directly under the gate structure.Further, the upward protrusion 204 remains spaced from the first andsecond contact regions 114, 118. In some embodiments, the upwardprotrusion 204 extends to a location elevated above bottom surfacesrespectively of the first and second contact regions 114, 118. In someembodiments, if a top surface of the upward protrusion 204 is elevatedabove bottom surfaces respectively of the first and second contactregions 114, 118, then the second separation S_(b) is reduced. This, inpart, facilitates reaching full depletion of the substrate 102 morequickly.

With reference to FIG. 2E, a cross-sectional view 200 e of somealternative embodiments of the IC of FIG. 2D is provided in which thefirst and second contact regions 114, 118 are rounded. Further, theupward protrusion 204 is rounded to conform to the first and secondcontact regions 114, 118, while remaining spaced from the first andsecond contact regions 114, 118 by the well region 116.

As seen in each of FIGS. 2C-2D, a top surface of the RESURF region 108is elevated above bottom surfaces respectively of the first and secondcontact regions 114, 118. In some embodiments, this reduces the secondseparation S_(b). This, in part, facilitates reaching full depletion ofthe substrate 102 more quickly.

While the buried implant region 202 of FIG. 2B is illustrated usingembodiments of the varactor 125 in FIG. 2A, it is to be understood thatthe buried implant region 202 may be used with embodiments of thevaractor 125 in any one of FIGS. 1 and 2C-2E. As such, the buriedimplant region 202 may be directly under the RESURF region 108 in anyone of FIGS. 1 and 2C-2E. While the upward protrusion 204 of FIG. 2D isillustrated using embodiments of the varactor 125 in FIG. 1, the upwardprotrusion 204 may be used with embodiments of the varactor 125 in anyone of FIGS. 2A-2C. Similarly, while the upward protrusion 204 of FIG.2E is illustrated using embodiments of the varactor 125 in FIG. 1, theupward protrusion 204 may be used with embodiments of the varactor 125in any one of FIGS. 2A-2C.

With reference to FIG. 3A a cross-sectional view 300 a of some moredetailed embodiments of the IC of FIG. 1 is provided in which anisolation structure 302 extends into an upper or top surface of thesubstrate 102 to provided electrical isolation between the varactor 125and neighboring devices. The isolation structure 302 includes a pair ofisolation segments respectively on opposite sides of the varactor 125,and the varactor 125 is sandwiched between the isolation segments. Insome embodiments, the isolation structure 302 comprises a dielectricmaterial, and/or is a shallow trench isolation (STI) structure, a deeptrench isolation structure (DTI), or some other suitable isolationstructure.

A sidewall spacer 304 is on sidewalls of the gate electrode 124 and thegate dielectric layer 122, and comprises a pair of sidewall spacersegments. The sidewall segments respectively overlie a first extensionregion 114 e of the first contact region 114 and a second extensionregion 118 e of the second contact region 118. The sidewall spacer 304is dielectric and may be or comprise, for example, silicon oxide,silicon nitride, silicon oxynitride, some other suitable dielectric, orany combination of the foregoing.

An interconnect structure 306 covers the varactor 125 and comprises aninterconnect dielectric layer 308 and a plurality of contact vias 310 c.The interconnect dielectric layer 308 accommodates a plurality ofcontact vias 310 c and may, for example, be or comprise silicon oxide, alow κ dielectric, some other suitable dielectric(s), or any combinationof the foregoing. As used herein, a low κ dielectric may be, forexample, a dielectric with a dielectric constant κ less than about 3.9,3, 2, or 1. The contact vias 310 c respectively overlie and areelectrically coupled to the gate electrode 124 and the first and secondcontact regions 114, 118. The high doping concentration of the first andsecond contact regions 114, 118, relative to the well region 116, and/orsilicide (not shown) on the first and second contact regions 114, 118may, for example, provide ohmic coupling between the first and secondcontact regions 114, 118 and respective ones of the contact vias 310 c.The contact vias 310 c may, for example, be or comprise copper, aluminumcopper, aluminum, tungsten, some other metal and/or conductivematerial(s), or any combination of the foregoing.

With reference to FIG. 3B, a cross-sectional view 300 b of somealternative embodiments of the IC of FIG. 3A is provided in which theisolation structure 302 is omitted and the varactor 125 is formed on amesa.

With reference to FIG. 4, a cross-sectional view 400 of some embodimentsof an IC comprising a first varactor 125 a and a second varactor 125 bis provided. The first and second varactors 125 a, 125 b are each as thevaractor 125 of FIG. 3A is illustrated and described, whereby the firstand second varactors 125 a, 125 b each comprise a well region 116 and aRESURF region 108. In some embodiments, the RESURF and well regions 108,116 of the first varactor 125 a are respectively P-type and N-type,whereas the RESURF and well regions 108, 116 of the second varactor 125b are respectively N-type and P-type, or vice versa.

The interconnect structure 306 comprises a plurality of vias 310,including the contact vias 310 c, and further includes a plurality ofwires 402. For ease of illustration, only some of the vias 310 arelabeled 310, and only some of the wires 402 are labeled 402. Further,only some of the contact vias 310 c are labeled 310 c. The vias 310 andthe wires 402 are alternatingly stacked in the interconnect dielectriclayer 308 to define conductive paths. For example, the vias 310 and thewires 402 may define a first conductive path electrically shorting thefirst and second contact regions 114, 118 of the first varactor 125 aand/or may define a second conductive path electrically shorting thefirst and second contact regions 114, 118 of the second varactor 125 b.

While the ICs of FIGS. 3A and 3B are illustrated using embodiments ofthe varactor 125 in FIG. 1, it is to be understood that embodiments ofthe varactor 125 in any one of FIGS. 2A-2E may alternatively be used inFIGS. 3A and 3B. Similarly, while the IC of FIG. 4 is illustrated usingembodiments of the varactor 125 in FIG. 1, it is to be understood thatembodiments of the varactor 125 in any one of FIGS. 2A-2E mayalternatively be used in FIG. 4.

With reference to FIGS. 5, 6, 7A, 7B, 8A, 8B and 9-12, cross-sectionalviews 500, 600, 700 a, 700 b, 800 a, 800 b and 900-1200 of variousembodiments of a method for forming an IC including a varactor with aRESURF region are provided. The method is illustrated using embodimentsof the varactor in FIG. 3A. Notwithstanding this, the method may be usedto form embodiments of the varactor in any one of FIGS. 1, 2A-2E, and3B. Additionally, as seen hereafter, FIGS. 8A and 8B are alternatives toFIGS. 7A and 7B. Therefore, the method may proceed from FIGS. 5 and 6 toFIGS. 7A and 7B, and then from FIGS. 7A and 7B to FIGS. 9-12 (skippingFIGS. 8A and 8B), in gate last embodiments of the method. Further, themethod may proceed from FIGS. 5 and 6 to FIGS. 8A and 8B (skipping FIGS.7A and 7B), and then from FIGS. 8A and 8B to FIGS. 9-12, in gate firstembodiments of the method.

Although the cross-sectional views 500, 600, 700 a, 700 b, 800 a, 800 band 900-1200 shown in FIGS. 5, 6, 7A, 7B, 8A, 8B and 9-12 are describedwith reference to a method, it will be appreciated that the structuresshown in FIGS. 5, 6, 7A, 7B, 8A, 8B and 9-12 are not limited to themethod but rather may stand alone separate of the method. Although FIGS.5, 6, 7A, 7B, 8A, 8B and 9-12 are described as a series of acts, it willbe appreciated that these acts are not limiting in that the order of theacts can be altered in other embodiments, and the methods disclosed arealso applicable to other structures. In other embodiments, some actsthat are illustrated and/or described may be omitted in whole or inpart.

As illustrated by the cross-sectional view 500 of FIG. 5, a substrate102 is provided. In some embodiments, the substrate 102 comprises asemiconductor substrate 502 and an epitaxial layer 504. Thesemiconductor substrate 502 may, for example, be a bulk monocrystallinesilicon substrate, some other suitable bulk semiconductor substrate, asilicon-on-insulator (SOI) substrate, or some other suitablesemiconductor substrate. The epitaxial layer 504 may, for example, be orcomprise monocrystalline silicon and/or some other suitablesemiconductor material(s). In other embodiments, the epitaxial layer 504is omitted, such that the substrate 102 and the semiconductor substrate502 are one and the same.

In embodiments in which the substrate 102 comprises the epitaxial layer504, the providing of the substrate 102 may, for example, compriseforming the epitaxial layer 504 on the semiconductor substrate 502. Theepitaxial layer 504 may, for example, be formed by molecular beamepitaxy (MBE), vapor phase epitaxy (VPE), liquid phase epitaxy (LPE),some other suitable epitaxial process, or any combination of theforegoing.

As illustrated by cross-sectional view 600 of FIG. 6, an isolationstructure 302 is formed. The isolation structure 302 extends into anupper or top surface of the substrate 102 and comprises a pair ofisolation segments that are laterally spaced. Further, the isolationstructure 302 comprises silicon oxide and/or some other suitabledielectric material(s). In some embodiments, the forming of theisolation structure 302 comprises patterning the substrate 102 to form atrench and filling the trench with a dielectric material.

As illustrated by the cross-sectional view 700 a of FIG. 7A, a RESURFregion 108 and a well region 116 are formed in the substrate 102, suchthat the well region 116 overlies the RESURF region 108. Further, thewell region 116 and the RESURF region 108 are formed with oppositedoping types. The RESURF region 108 and the well region 116 may, forexample, be formed by ion implantation and/or some other suitable dopingprocess(es) in which dopants 702 are added to the substrate 102. In someembodiments, the RESURF region 108 is formed before the well region 116.In other embodiments, the well region 116 is formed before the RESURFregion 108. In some embodiments, the well region 116 is doped withN-type dopants and the RESURF region 108 is doped with P-type dopants.In other embodiments, the well region 116 is doped with the P-typedopants and the RESURF region 108 is doped with N-type dopants. TheP-type dopants may, for example, be or comprise boron, difluoroboryl,indium, some other suitable P-type dopants, or any combination of theforegoing. The N-type dopants of the well region 116 may, for example,be or comprise phosphorous, arsenic, antimony, some other suitableN-type dopants, or any combination of the foregoing. In someembodiments, a doping concentration of the well region 116 and/or adoping concentration of the RESURF region 108 is/are about 1×10¹² toabout 1×10¹⁶ atoms/cm³, about 1×10¹² to about 1×10¹⁴ atoms/cm³, about1×10¹⁴ to about 1×10¹⁶ atoms/cm³, or some other suitable concentration.

While the RESURF region 108 and the well region 116 are illustrated asrespectively being formed in the epitaxial layer 504 and thesemiconductor substrate 502, the RESURF region 108 and the well region116 may both be formed in the epitaxial layer 504 in alternativeembodiments. Further, while the RESURF region 108 and the well region116 are illustrated as being formed after the isolation structure 302,the isolation structure 302 may be formed after the RESURF region 108and the well region 116 in alternative embodiments. While the RESURFregion 108 and the well region 116 are respectively illustrated asregions respectively of the semiconductor substrate 502 and theepitaxial layer 504, the RESURF region 108 and the well region 116 may,for example, be discrete epitaxial layers formed over the semiconductorsubstrate 502 in alternative embodiments.

As illustrated by the cross-sectional view 700 b of FIG. 7B, a gatedielectric layer 122 and a gate electrode 124 are formed stacked on thewell region 116. The gate dielectric layer 122 may, for example, be orcomprise silicon oxide, hafnium oxide, some other suitable high κdielectric, some other suitable dielectric, or any combination of theforegoing. As used herein, a high κ dielectric may be, for example, adielectric with a dielectric constant κ greater than about 3.9, 10, or20. The gate electrode 124 may, for example, be or comprise dopedpolysilicon, metal, some other suitable conductive material, or anycombination of the foregoing.

In some embodiments, a process for forming the gate dielectric layer 122and the gate electrode 124 comprises depositing a dielectric layer onthe substrate 102, depositing a conductive layer over the dielectriclayer, and patterning the dielectric layer and the conductive layer intothe gate dielectric layer 122 and the gate electrode. The depositingmay, for example, be performed by chemical vapor deposition (CVD),physical vapor deposition (PVD), some other suitable depositionprocess(es), or any combination of the foregoing. The patterning may,for example, be performed by a photolithography/etching process and/orsome other suitable patterning process(es).

As noted above, FIGS. 7A and 7B pertain to gate last embodiments of themethod since the gate dielectric layer 122 and the gate electrode 124are formed after the well region 116 and the RESURF region 108. The actsat FIGS. 8A and 8B may alternatively be performed in place of the actsat FIGS. 7A and 7B for gate first embodiments of the method in which thegate dielectric layer 122 and the gate electrode 124 are formed beforethe well region 116 and the RESURF region 108.

As illustrated by the cross-sectional view 800 a of FIG. 8A, the gatedielectric layer 122 and the gate electrode 124 are formed stacked onthe substrate 102. The gate dielectric layer 122 and the gate electrode124 may, for example, be performed as described with regard to FIG. 7B.As illustrated by the cross-sectional view 800 b of FIG. 8B, the RESURFregion 108 and the well region 116 are formed in the substrate 102,through the gate dielectric layer 122 and the gate electrode 124. Thewell region 116 and the RESURF region 108 may, for example, be formed asdescribed with regard to FIG. 7A. While the RESURF region 108 and thewell region 116 are illustrated as respectively being formed in theepitaxial layer 504 and the semiconductor substrate 502, the RESURFregion 108 and the well region 116 may both be formed in the epitaxiallayer 504 in alternative embodiments. In some embodiments, afterperforming the ion implantation process to form the aforementionedregions, an annealing process may be performed to activate the implanteddopants.

In some embodiments, the gate first embodiments illustrated anddescribed in FIGS. 8A and 8B may reduce the amount of thermal processingthat the RESURF region 108 and the well region 116 are exposed to. Forexample, because the RESURF region 108 and the well region 116 areformed after the gate dielectric layer 122 and the gate electrode 124are formed, the RESURF region 108 and the well region 116 are notexposed to thermal processes uses while forming the gate dielectriclayer 122 and the gate electrode 124. By reducing the amount of thermalprocessing that the RESURF region 108 and the well region 116 areexposed to, diffusion of dopants in the RESURF region 108 and the wellregion 116 is reduced and hence a doping profile of the RESURF region108 and the well region 116 may be more tightly controlled. This, inturn, may enhance performance of the varactor being formed.

Regardless of whether the acts at FIGS. 7A and 7B are performed, or theacts of FIGS. 8A and 8B are performed, the method next proceeds to theacts at FIG. 9. As illustrated by the cross-sectional view 900 of FIG.9, a first extension region 114 e and a second extension region 118 eare formed in the substrate 102, overlying the well region 116. Further,the first and second extension regions 114 e, 118 e are formedrespectively along opposite sidewalls of the gate electrode 124. Thefirst and second extension regions 114 e, 118 e have the same dopingtype as the well region 116 and, in some embodiments, have a greaterdoping concentration than the well region 116. For example, the firstand second extension regions 114 e, 118 e and the well region 116 may beN-type. The first and second extension regions 114 e, 118 e may, forexample, be formed by ion implantation and/or some other suitable dopingprocess(es) in which dopants 902 are added to the substrate 102.

As illustrated by the cross-sectional view 1000 of FIG. 10, a sidewallspacer 304 is formed on sidewalls of the gate electrode 124 andcomprises a pair of sidewall spacer segments. The sidewall spacersegments respectively overlying the first and second extension regions114 e, 118 e and are respectively on opposite sidewalls of the gateelectrode 124. In some embodiments, a process for forming the sidewallspacer 304 comprises depositing a dielectric layer covering the gateelectrode 124 and lining sidewalls of the gate electrode 124, andsubsequently performing an etch back into the dielectric layer to formthe sidewall spacer 304.

As illustrated by the cross-sectional view 1100 of FIG. 11, a firstcontact region 114 and a second contact region 118 are formed in thesubstrate 102, respectively overlapping with the first and secondextension regions 114 e, 118 e. The first and second contact regions114, 118 have the same doping type as the first and second extensionregions 114 e, 118 e, but have a greater doping concentration than thefirst and second extension regions 114 e, 118 e. The first and secondcontact regions 114, 118 may, for example, be formed by ion implantationand/or some other suitable doping process(es) in which dopants 1102 areadded to the substrate 102.

As illustrated by the cross-sectional view 1200 of FIG. 12, aninterconnect structure 306 is formed over the structure of FIG. 11. Theinterconnect structure 306 is only partially shown, comprising aninterconnect dielectric layer 308 and a plurality of contact vias 310 c.The contact vias 310 c are in the interconnect dielectric layer 308 andextend respectively from the gate electrode 124 and the first and secondcontact regions 114, 118. The interconnect dielectric layer 308 may, forexample, be formed by CVD, PVD, some other suitable depositionprocess(es), or any combination of the foregoing. The contact vias 310 cmay, for example, be formed by: patterning the interconnect dielectriclayer 308 to form via openings with a pattern of the contact vias 310 c;depositing a conductive layer filling the via openings and covering theinterconnect dielectric layer 308; and performing a planarization intothe conductive layer until the interconnect dielectric layer 308 isreached. The patterning may, for example, be performed by aphotolithography/etching process and/or some other suitable patterningprocess(es). The depositing may, for example, be performed by CVD, PVD,electroless plating, electroplating, some other suitable depositionprocess(es), or any combination of the foregoing. The planarization may,for example, be performed by a CMP and/or some other suitableplanarization process(es).

With reference to FIG. 13, a block diagram 1300 of some embodiments of amethod 1300 for the method of FIGS. 5, 6, 7A, 7B, 8A, 8B and 9-12 isprovided. In gate first embodiments of the method, the acts at 1302a-1302 c are performed. In gate last embodiments of the method, the acts1304 a-1304 c are performed in place of the acts at 1302 a-1302 c.

At 1302 a, a gate structure is formed over a substrate. FIG. 8Aillustrates a cross-sectional view 800 a corresponding to someembodiments of act 1302 a.

At 1302 b, a drift region comprising a first doping type is formedbeneath the gate structure. FIG. 8B illustrates a cross-sectional view800 b corresponding to some embodiments of act 1302 b.

At 1302 c, a RESURF region comprising a second doping type is formedbeneath the drift region. FIG. 8B illustrates a cross-sectional view 800b corresponding to some embodiments of act 1302 c. In alternativeembodiments, the ordering of 1302 b and 1302 c is reversed, such thatthe drift region is formed after the RESURF region.

At 1304 a, a drift region comprising a first doping type is formedwithin a substrate. FIG. 7A illustrates a cross-sectional view 700 acorresponding to some embodiments of act 1304 a.

At 1304 b, a RESURF region comprising a second doping type is formedbeneath the drift region. FIG. 7A illustrates a cross-sectional view 700a corresponding to some embodiments of act 1304 b.

At 1304 c, a gate structure is formed over the drift region. FIG. 7Billustrates a cross-sectional view 700 b corresponding to someembodiments of act 1304 c. In alternative embodiments, the ordering of1304 b and 1304 c is reversed, such that the drift region is formedafter the RESURF region.

Regardless of whether the acts at 1302 a-1302 c are performed or theacts at 1304 a-1304 c are performed, the acts at 1306-1310 are nextperformed.

At 1306, a first extension region and a second extension region areformed in the substrate, where the first and second extension regionscomprise the first doping type and are formed at opposite ends of thedrift region. FIG. 9 illustrates a cross-sectional view 900corresponding to some embodiments of act 1306.

At 1308, a sidewall spacer is formed on sidewalls of the gate structure.FIG. 10 illustrates a cross-sectional view 1000 corresponding to someembodiments of act 1308.

At 1310, a first contact region and a second contact region are formedrespectively overlapping the first and second extension regions, wherethe first and second contact regions comprise the first doping type.FIG. 11 illustrates a cross-sectional view 1100 corresponding to someembodiments of act 1310.

At 1312, an interconnect structure is formed over the first and secondcontact regions and the gate structure. FIG. 12 illustrates across-sectional view 1200 corresponding to some embodiments of act 1312.

Although the method 1300 is illustrated and/or described as a series ofacts or events, it will be appreciated that the method is not limited tothe illustrated ordering or acts. Thus, in some embodiments, the actsmay be carried out in different orders than illustrated, and/or may becarried out concurrently. Further, in some embodiments, the illustratedacts or events may be subdivided into multiple acts or events, which maybe carried out at separate times or concurrently with other acts orsub-acts. In some embodiments, some illustrated acts or events may beomitted, and other un-illustrated acts or events may be included.

With reference to FIG. 14, a cross-sectional view 1400 illustrates actsthat may be performed in place of the acts at FIGS. 5, 6, and 7A, suchthat the method of FIGS. 5, 6, 7A, 7B, 8A, 8B and 9-12 may alternativelyproceed from FIG. 14 to FIG. 7B, and then from FIG. 7B to FIGS. 9-12(skipping FIGS. 8A and 8B). As illustrated by the cross-sectional view1400 of FIG. 14, the RESURF region 108 is formed on the semiconductorsubstrate 502 by epitaxy, and the well region 116 is later formed on theRESURF region 108 by epitaxy. As such, the RESURF region 108 is adiscrete epitaxial layer, and the well region 116 is a discreteepitaxial layer. Further, the RESURF region 108, the well region 116,and the semiconductor substrate 502 collectively define the substrate102 for purposes of performing the acts at FIGS. 7B and 9-12.

The epitaxy of the RESURF region 108 and/or the epitaxy of the wellregion 116 may, for example, be formed by MBE, VPE, LPE, some othersuitable epitaxial process, or any combination of the foregoing.Further, while performing the epitaxy of the RESURF region 108 and/orthe epitaxy of the well region 116, doping is simultaneously performed.In some embodiments, a doping concentration of the well region 116and/or a doping concentration of the RESURF region 108 is/are about1×10¹⁵ to about 1×10²⁰ atoms/cm³, about 1×10¹⁵ to about 1×10¹⁷atoms/cm³, about 1×10¹⁷ to about 1×10²⁰ atoms/cm³, or some othersuitable concentration.

With reference to FIGS. 15A and 15B, cross-sectional views 1500 a and1500 b illustrate acts that may be performed in place of the acts atFIGS. 5 and 6. As such, the method of FIGS. 5, 6, 7A, 7B, 8A, 8B and9-12 may alternatively proceed from FIGS. 15A and 15B to FIGS. 7A and7B, and then from FIGS. 7A and 7B to FIGS. 9-12 (skipping FIGS. 8A and8B), in gate last embodiments of the method. Further, the method ofFIGS. 5, 6, 7A, 7B, 8A, 8B and 9-12 may alternatively proceed from FIGS.15A and 15B to FIGS. 8A and 8B, and then from FIGS. 8A and 8B to FIGS.9-12 (skipping FIGS. 7A and 7B), in gate first embodiments of themethod.

As illustrated by the cross-sectional view 1500 a of FIG. 15A, theRESURF region 108 is formed in a semiconductor substrate 502. The RESURFregion 108 may, for example, be formed as described with regard to FIG.7A.

As illustrated by the cross-sectional view 1500 b of FIG. 15B, theepitaxial layer 504 is formed on the semiconductor substrate 502 and theRESURF region 108. The epitaxial layer 504 may, for example, be formedby MBE, VPE, LPE, some other suitable epitaxial process, or anycombination of the foregoing.

As noted above, the acts at FIGS. 7A and 7B may next be performed forgate last embodiments, or the acts of FIGS. 8A and 8B may next beperformed for gate first embodiments. Since the RESURF region 108 hasalready been formed, there is no forming of the RESURF region 108 whileperforming the acts at FIGS. 7A and 7B or the acts at FIGS. 8A and 8B.

Accordingly, in some embodiments, the present application relates to avaractor that comprises a RESURF region (or layer) formed directly belowa drift region (or layer).

In some embodiments, the present application provides a varactorincluding: a drift region is in a substrate and has a first doping type;a gate structure is above the drift region; a pair of contact regions isin the substrate, overlying the drift region, wherein the contactregions have the first doping type, and wherein the gate structure islaterally sandwiched between the contact regions; a RESURF region in thesubstrate, below the drift region, wherein the RESURF region has asecond doping type, and wherein the second doping type is opposite thefirst doping type.

In some embodiments, the present application provides an IC including: asubstrate including a first doped region having a first doping type, andfurther including a second doped region have a second doping typeopposite the first doping type, wherein the second doped region overliesthe first doped region and contacts the first doped region at aPN-junction, and wherein the second doped region extends from the firstdoped region to a top surface of the semiconductor substrate; and a gatedielectric layer and a gate electrode stacked on the top surface of thesemiconductor substrate, overlying the second doped region.

In some embodiments, the present application provides a method forforming a varactor, the method including: forming a RESURF region havinga first doping type within a substrate; forming a drift region having asecond doping type within the substrate, wherein the drift region andthe RESURF region are formed so the RESURF region is below the driftregion; forming a gate structure on the substrate; and forming a pair ofcontact regions in the substrate and overlying the drift region, whereinthe contact regions are formed respectively on opposite sides of thegate structure and have the second doping type, and wherein the firstdoping type is opposite the second doping type.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A varactor comprising: a drift region is in asubstrate and has a first doping type; a gate structure is above thedrift region; a pair of contact regions is in the substrate, overlyingthe drift region, wherein the contact regions have the first dopingtype, wherein the gate structure is laterally sandwiched between thecontact regions, and wherein the drift region continuously laterallyextends from a sidewall of a first contact region in the pair of contactregions to a sidewall of a second contact region in the pair of contactregions; and a RESURF region in the substrate, below the drift region,wherein the RESURF region has a second doping type, and wherein thesecond doping type is opposite the first doping type.
 2. The varactor ofclaim 1, wherein the first doping type is n-type and the second dopingtype is p-type.
 3. The varactor of claim 1, wherein the RESURF regioncomprises boron, indium, or difluoroboron (BF₂), and wherein the driftregion comprises phosphorus, arsenic, or antimony.
 4. The varactor ofclaim 1, wherein the first doping type is p-type and the second dopingtype is n-type.
 5. The varactor of claim 1, wherein the drift regioncomprises boron, indium, or difluoroboron (BF₂), and wherein the RESURFregion comprises phosphorus, arsenic, or antimony.
 6. The varactor ofclaim 1, wherein the RESURF region is in direct contact with the contactregions.
 7. The varactor of claim 1, wherein the RESURF region protrudesupward to a location directly under the gate structure and elevatedabove a bottom of the contact regions.
 8. The varactor of claim 1,wherein the RESURF region is spaced from the contact regions.
 9. Thevaractor of claim 1, further comprising: a doped region in thesubstrate, directly below the RESURF region, and comprising the firstdoping type.
 10. The varactor of claim 1, wherein the contact regionshave a higher doping concentration than the drift region.
 11. Anintegrated circuit (IC) comprising: a semiconductor substrate comprisinga first doped region having a first doping type, a second doped regionhaving a second doping type opposite the first doping type, and a pairof contact regions having the second doping type, wherein the seconddoped region overlies the first doped region and contacts the firstdoped region at a PN-junction, wherein the second doped region extendsfrom the first doped region to a top surface of the semiconductorsubstrate, wherein the contact regions overlie the first doped region,and wherein the first doped region comprises an upward protrusion thatextends to a location elevated above a bottom surface of the contactregions; and a gate structure comprising a gate dielectric layer and agate electrode stacked on the top surface of the semiconductorsubstrate, overlying the second doped region.
 12. The IC of claim 11,wherein the contact regions have a higher doping concentration than thesecond doped region, and wherein the contact regions respectively borderopposite sidewalls of the gate electrode.
 13. The IC of claim 12,further comprising: an interconnect structure overlying the gatestructure and the contact regions, wherein the interconnect structurecomprises a plurality of wires and a plurality of vias, and wherein thewires and the vias define a conductive path electrically shorting thecontact regions together.
 14. The IC of claim 12, wherein the seconddoped region spaces the first doped region from the contact regions. 15.The IC of claim 12, wherein the first doped region contacts the contactregions respectively at PN junctions.
 16. The IC of claim 12, whereinthe upward protrusion directly underlies the gate electrode.
 17. Avaractor comprising: a gate structure overlying a substrate, wherein thegate structure comprises a gate dielectric layer overlying the substrateand a gate electrode overlying the gate dielectric layer; a well regiondisposed within the substrate and directly underlying the gatedielectric layer, wherein the well region comprises a first doping type;a pair of contact regions disposed within the substrate and disposed onopposing sides of the well region, wherein the pair of contact regionscomprise the first doping type, and wherein a doping concentration ofthe pair of contact regions is greater than a doping concentration ofthe well region; a lower doped region disposed within the substrate andunderlying the well region, wherein the lower doped region comprises thefirst doping type, and wherein a doping concentration of the lower dopedregion is less than the doping concentration of the well region; and aRESURF region disposed within the substrate and disposed between thewell region and the lower doped region, wherein the RESURF regioncomprises a second doping type that is opposite the first doping type.18. The varactor of claim 17, wherein a doping concentration of theRESURF region is less than the doping concentration of the pair ofcontact regions.
 19. The varactor of claim 17, wherein the RESURF regioncomprises a protrusion that extends upward towards the gate structure ata location directly under the gate structure, wherein the protrusion isspaced vertically above a bottom surface of the pair of contact regions,and wherein the well region is disposed between the protrusion and thepair of contact regions.
 20. The varactor of claim 17, wherein a bottomsurface of the well region is aligned with a bottom surface of the pairof contact regions, wherein the RESURF region continuously laterallyextends from the bottom surface of the pair of contact regions to thebottom surface of the well region.